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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF275G/D
The RF MOSFET Line
Power Field-Effect Transistor
N-Channel Enhancement-Mode
Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. * Guaranteed Performance @ 500 MHz, 28 Vdc Output Power -- 150 Watts Power Gain -- 10 dB (Min) Efficiency -- 50% (Min) 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1 * Overall Lower Capacitance @ 28 V Ciss -- 135 pF Coss -- 140 pF Crss -- 17 pF * Simplified AVC, ALC and Modulation Typical data for power amplifiers in industrial and commercial applications: * Typical Performance @ 400 MHz, 28 Vdc Output Power -- 150 Watts Power Gain -- 12.5 dB Efficiency -- 60% * Typical Performance @ 225 MHz, 28 Vdc Output Power -- 200 Watts Power Gain -- 15 dB Efficiency -- 65%
D
MRF275G
150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
G G S (FLANGE) CASE 375-04, STYLE 2 D
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 65 65 40 26 400 2.27 - 65 to +150 200 Unit Vdc Vdc Adc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Max 0.44 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF275G 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate-Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc mA A
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 5 A) Forward Transconductance (VDS = 10 V, ID = 2.5 A) VGS(th) VDS(on) gfs 1.5 0.5 3 2.5 0.9 3.75 4.5 1.5 -- Vdc Vdc mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Crss -- -- -- 135 140 17 -- -- -- pF pF pF
FUNCTIONAL CHARACTERISTICS (2) (Figure 1)
Common Source Power Gain (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) Drain Efficiency (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) Electrical Ruggedness (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA, VSWR 30:1 at all Phase Angles) (1.) Each side of device measured separately. (2.) Measured in push-pull configuration. Gps No Degradation in Output Power 10 50 11.2 55 -- -- dB %
MRF275G 2
MOTOROLA RF DEVICE DATA
A
B C17 C18 L5 L6 +28 V C19 +
+VGG C14 R1 L1 C1 Z1 C2 B1 C3 Z2 C4 L2 A C20 C21 L4 B Z4 Z6 Z8 C5 C6 C7 C8 Z3 D.U.T. Z5 Z7 C15 C16 C22 L3
C10
C11 C9 C12 B2
C13
B1 B2 C1, C2, C3, C4, C10, C11, C12, C13 C5, C8 C6 C7 C9 C14, C15, C16, C20, C21, C22 C17, C18 C19 L1, L2
Balun, 50 , 0.086 O.D. 2 Long, Semi Rigid Coax Balun, 50 , Coax 0.141 O.D. 2 Long, Semi Rigid 270 pF, ATC Chip Capacitor 1.0 - 20 pF, Trimmer Capacitor, Johanson 22 pF, Mini-Unelco Capacitor 15 pF, Unelco Capacitor 2.1 pF, ATC Chip Capacitor 0.1 F, Ceramic Capacitor 680 pF, Feedthru Capacitor 10 F, 50 V, Electrolytic Capacitor, Tantalum 10 Turns AWG #24, 0.145 O.D., 106 nH Taylor-Spring Inductor 10 Turns AWG #18, 0.340 I.D., Enameled Wire
L5 L6 R1 W1 - W4
Z1, Z2 Z3, Z4, Z5, Z6 Z7, Z8
Ferroxcube VK200 20/4B 4 Turns #16, 0.340 I.D., Enameled Wire 1.0 k,1/4 W Resistor 20 x 200 x 250 mils, Wear Pads, Beryllium-Copper, (See Component Location Diagram) 1.10 x 0.245, Microstrip Line 0.300 x 0.245, Microstrip Line 1.00 x 0.245, Microstrip Line
Board material 0.060 Teflon-fiberglass, r = 2.55, copper clad both sides, 2 oz. copper. Points A are connected together on PCB. Points B are connected together on PCB.
L3, L4
Figure 1. 500 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF275G 3
TYPICAL CHARACTERISTICS
300 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 250 200 150 100 50 0 0 5 10 15 Pin, INPUT POWER (Watts) 20 25 IDQ = 2 x 100 mA VDD = 28 V 225 MHz 400 MHz 500 MHz 160 140 120 100 80 60 40 20 0 -10 -8 VDS = 28 V IDQ = 2 x 100 mA Pin = Constant f = 500 MHz 0 -6 -4 -2 VGS, GATE-SOURCE VOLTAGE (V) 2 4
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Gate Voltage
10 9 I D , DRAIN CURRENT (AMPS) 8 7 6 5 4 3 2 1 0 0 0.5 1 2 1.5 2.5 3.5 3 VGS, GATE-SOURCE VOLTAGE (V) 4 4.5 5 Pout , OUTPUT POWER (WATTS) VDS = 10 V VGS(th) = 2.5 V
180 160 140 120 100 6W 80 60 40 20 0 12 14 16 22 18 20 VDD, SUPPLY VOLTAGE (V) IDQ = 2 x 100 mA f = 500 MHz 24 26 28 Pin = 14 W 10 W
Figure 4. Drain Current versus Gate Voltage (Transfer Characteristics)
Figure 5. Output Power versus Supply Voltage
200 180 Pout , OUTPUT POWER (WATTS) 160 140 120 100 80 60 40 20 0 12 14 16 18 20 22 VDD, SUPPLY VOLTAGE (V) IDQ = 2 x 100 mA f = 400 MHz 24 26 28 6W 10 W Pin = 14 W Pout , OUTPUT POWER (WATTS)
250 12 W 200 10 W 150 Pin = 4 W 100 IDQ = 2 x 100 mA f = 225 MHz
50
0 12
14
16
18 20 22 24 VDD, SUPPLY VOLTAGE (V)
26
28
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Supply Voltage
MRF275G 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1000 1.3 VDD = 28 V 1.2 1.1 1 0.9 3A 0.8 0.7 -25 ID = 4 A 2A
Coss C, CAPACITANCE (pF) 100 Ciss
10
Crss VGS = 0 V f = 1.0 MHz
0.1 A
1 0 5 20 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) 25 30
0
25
75 50 100 125 150 TC, CASE TEMPERATURE (C)
175
200
Figure 8. Capacitance versus Drain-Source Voltage* *Data shown applies only to one half of device, MRF275G
100
Figure 9. Gate-Source Voltage versus Case Temperature
I D , DRAIN CURRENT (AMPS)
TC = 25C 10
1
1
10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 10. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
MRF275G 5
VDD = 28 V, IDQ = 2 x 100 mA, Pout = 150 W f (MHz) 225 f = 500 MHz 400 500 f = 500 MHz 400 400 Zin ZOL* 225 Zo = 10 Zin Ohms 1.6 - j2.30 1.9 + j0.48 1.9 + j2.60 ZOL* Ohms 3.2 - j1.50 2.3 - j0.19 2.0 + j1.30
ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. Note: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
225
Figure 11. Series Equivalent Input/Output Impedance
MRF275G 6
MOTOROLA RF DEVICE DATA
A
B C14 L5 C15 L6 C18 L3 C8 Z3 Z5 28 V
BIAS C10 C11 R1 C12 R2 C13
C1
L1 Z1
D.U.T.
B1
C3
C4
C5
C6
C7
B2
C2
L2
Z2
Z4
Z6 C9
R3 A C16
L4 B C17 0.180
B1 B2 C1, C2, C8, C9 C3, C5, C7 C4 C6 C10, C12, C13, C16, C17 C11 C14, C15 C18
Balun, 50 , 0.086 O.D. 2 Long, Semi Rigid Coax Balun, 50 , 0.141 O.D. 2 Long, Semi Rigid Coax 270 pF, ATC Chip Capacitor 1.0 - 20 pF, Trimmer Capacitor 15 pF, ATC Chip Capacitor 33 pF, ATC Chip Capacitor 0.01 F, Ceramic Capacitor 1.0 F, 50 V, Tantalum 680 pF, Feedthru Capacitor 20 F, 50 V, Tantalum
L1, L2 L3, L4 L5 L6 R1 R2, R3 Z1, Z2 Z3, Z4 Z5, Z6
#18 Wire, Hairpin Inductor 12 Turns #18, 0.340 I.D., Enameled Wire Ferroxcube VK200 20/4B 3 Turns #16, 0.340 I.D., Enameled Wire 1.0 k, 1/4 W Resistor 10 k, 1/4 W Resistor 0.400 x 0.250, Microstrip Line 0.870 x 0.250, Microstrip Line 0.500 x 0.250, Microstrip Line
0.200
Board material 0.060 Teflon-fiberglass, r = 2.55, copper clad both sides, 2 oz. copper.
Figure 12. 400 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF275G 7
R1 BIAS 0 - 6 V C3 C4 C8 C9
L2 C10
+ 28 V -
R2 D.U.T. T1 T2
L1
C5 C1 C2
C6
C7
C1 C2, C3, C7, C8 C4, C9 C5 C6 C10 L1 L2
8.0 - 60 pF, Arco 404 1000 pF, Chip Capacitor 0.1 F, Chip Capacitor 180 pF, Chip Capacitor 100 pF and 130 pF, Chips in Parallel 0.47 F, Chip Capacitor, 1215 or Equivalent, Kemet 10 Turns AWG #16, 1/4 I.D., Enamel Wire, Close Wound Ferrite Beads of Suitable Material for 1.5 - 2.0 H Total Inductance
R1 R2 T1
T2
100 , 1/2 W 1.0 k , 1/2 W 4:1 Impedance Ratio, RF Transformer Can Be Made of 25 , Semi Rigid Coax, 47 - 52 Mils O.D. 1:9 Impedance Ratio, RF Transformer. Can Be Made of 15 - 18 , Semi Rigid Coax, 62 - 90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer.
Board material 062 fiberglass (G10), r 5, Two sided, 1 oz. Copper.
^
Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent.
Figure 13. 225 MHz Test Circuit
MRF275G 8
MOTOROLA RF DEVICE DATA
L5 B1 C17 R1 C14 C15 L3 L1 W1 C1 C2 C3 C4 L2 C20 L4 BEADS 4-6 B2 C21 W4 C5 C8 C10 C11 C9 C12 C13 C16 BEADS 1-3 C18 C22 L6 + C19
C6 W2
C7 W3 MRF275G
JL
Figure 14. MRF275G Component Location (500 MHz) (Not to Scale)
MRF275G
JL
Figure 15. MRF275G Circuit Board Photo Master (500 MHz) Scale 1:1 (Reduced 25% in printed data book, DL110/D)
MOTOROLA RF DEVICE DATA
MRF275G 9
Figure 16. MRF275G Test Fixture
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (Cgs). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain- to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications.
DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd
provided for general information about the device. They are not RF design parameters and no attempt should be made to use them as such. LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain, data presented in Figure 3 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes.
SOURCE
The Ciss given in the electrical characteristics table was measured using method 2 above. It should be noted that Ciss, Coss, Crss are measured at zero drain current and are
MRF275G 10
MOTOROLA RF DEVICE DATA
Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating (or any of the maximum ratings on the front page). Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of this device are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with grounded equipment.
DESIGN CONSIDERATIONS The MRF275G is a RF power N-channel enhancement mode field-effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF275G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF275G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems.
MOTOROLA RF DEVICE DATA
MRF275G 11
PACKAGE DIMENSIONS
U G
1 2
Q
RADIUS 2 PL
0.25 (0.010)
M
TA
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 1.330 1.350 0.370 0.410 0.190 0.230 0.215 0.235 0.050 0.070 0.430 0.440 0.102 0.112 0.004 0.006 0.185 0.215 0.845 0.875 0.060 0.070 0.390 0.410 1.100 BSC DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.79 34.29 9.40 10.41 4.83 5.84 5.47 5.96 1.27 1.77 10.92 11.18 2.59 2.84 0.11 0.15 4.83 5.33 21.46 22.23 1.52 1.78 9.91 10.41 27.94 BSC
R
5
-B- K
3 4
D N J
E H
DIM A B C D E G H J K N Q R U
-T- -A- C
SEATING PLANE
STYLE 2: PIN 1. 2. 3. 4. 5.
CASE 375-04 ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MRF275G 12
MRF275G/D MOTOROLA RF DEVICE DATA
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